IEDM 2009 Conference: IQE and Intel presented joint paper on the development of InGaAs on Si devices with high-K gate dielectrics for Low Power Logic Applications

IQE plc 9 December 2009 IQE and Intel Corporation presented a joint paper on the development of InGaAs on Si devices with high-K gate dielectrics for low power logic applications. The paper was presented by Dr. Marko Radosavljevic of Intel Corporation at the International Electron Devices Meeting (IEDM) held in Baltimore, MD from 7th to 9th December 2009. The paper presented the results of work carried out by scientists at Intel's Technology and Manufacturing Group in Oregon and IQE's epitaxial growth facility in Bethlehem, Pennsylvania. The ever increasing performance requirements of modern-day microprocessors has for decades been achieved by the continuous scaling of Si CMOS devices, but this enhanced performance is at the cost of increased power consumption. In recent years, scientists have been looking towards materials based solutions to ensure that technology can keep up with the demands of following Moore's Law. Compound semiconductor-based Quantum Well Field Effect Transistor (QWFET) provide the potential for achieving high performance and low power consumption in future generation microprocessor applications, and the integration with Si transistors on a single chip provides the optimal solution. The paper, entitled: "Advanced High-K Gate Dielectric for High-Performance Short-Channel In0.7Ga0.3As Quantum Well Field Effect Transistors on Silicon Substrate for Low Power Logic Applications," relates to the development of novel technology for producing leading edge transistor devices for future generation high-speed, ultra-low power digital logic applications. IQE's facility in Bethlehem, PA, produced the blanket InGaAs QWFET epiwafers grown on Si substrates using molecular beam epitaxy (MBE). Intel Corporation used the blanket epiwafers for their transistor design and fabrication. Steve Gergar, General Manager of IQE's Pennsylvania operation commented: "IQE has played a key role in the development of epitaxial materials upon which Intel has fabricated devices which demonstrate improved device characteristics and significantly higher transistor drive performance whilst maintaining low power consumption. "The results of this work demonstrate IQE's strength in advanced epitaxial material engineering built on many years of experience with III-V materials from research and development through to high-volume production. Based on this successful research to-date, IQE looks forward to continued work with Intel in the area of III-V on Si integration for future generation high performance digital applications." Contacts: Technical/Sales: IQE Inc (+1 610 972 1488) Amy Liu Press: IQE plc (+44 29 2083 9400) Chris Meadows Note to Editors IQE is the leading global supplier of advanced semiconductor wafers with products that cover a diverse range of applications, supported by an innovative outsourced foundry services portfolio that allows the Group to provide a 'one stop shop' for the wafer needs of the world's leading semiconductor manufacturers. IQE uses advanced crystal growth technology (epitaxy) to manufacture and supply bespoke semiconductor wafers ('epi-wafers') to the major chip manufacturing companies, who then use these wafers to make the chips which form the key components of virtually all high technology systems. IQE is unique in being able to supply wafers using all of the leading crystal growth technology platforms. IQE's products are found in many leading-edge consumer, communication, computing and industrial applications, including a complete range of wafer products for the wireless industry, such as mobile handsets and wireless infrastructure, Wi-Fi, WiMAX, base stations, GPS, and satellite communications; optical communications, optical storage (CD, DVD), laser optical mouse, laser printers & photocopiers, thermal imagers, leading-edge medical products, barcode, ultra high brightness LEDs, a variety of advanced silicon based systems and high efficiency concentrator photovoltaic (CPV) solar cells. The manufacturers of these chips are increasingly seeking to outsource wafer production to specialist foundries such as IQE in order to reduce overall wafer costs and accelerate time to market. IQE also provides bespoke R&D services to deliver customised materials for specific applications and offers specialist technical staff to manufacture to specification either at its own facilities or on the customer's own sites. The Group is also able to leverage its global purchasing volumes to reduce the cost of raw materials. In this way IQE's outsourced services, provide compelling benefits in terms of flexibility and predictability of cost, thereby significantly reducing operating risk. IQE comprises six operating facilities located in Cardiff (two) and Milton Keynes in the UK; in Bethlehem, Pennsylvania and Somerset, New Jersey in the USA; and Singapore. The Group also has 11 sales offices located in major economic centres worldwide. This announcement was originally distributed by Hugin. The issuer is solely responsible for the content of this announcement.