IEDM 2009 Conference: IQE and Intel presented joint paper on the
development of InGaAs on Si devices with high-K gate dielectrics for
Low Power Logic Applications
9 December 2009
IQE and Intel Corporation presented a joint paper on the development
of InGaAs on Si devices with high-K gate dielectrics for low power
logic applications. The paper was presented by
Dr. Marko Radosavljevic of Intel Corporation at the International
Electron Devices Meeting (IEDM) held in Baltimore, MD from 7th to 9th
December 2009. The paper presented the results of work carried out by
scientists at Intel's Technology and Manufacturing Group in Oregon
and IQE's epitaxial growth facility in Bethlehem, Pennsylvania.
The ever increasing performance requirements of modern-day
microprocessors has for decades been achieved by the continuous
scaling of Si CMOS devices, but this enhanced performance is at the
cost of increased power consumption. In recent years, scientists have
been looking towards materials based solutions to ensure that
technology can keep up with the demands of following Moore's Law.
Compound semiconductor-based Quantum Well Field Effect Transistor
(QWFET) provide the potential for achieving high performance and low
power consumption in future generation microprocessor applications,
and the integration with Si transistors on a single chip provides the
The paper, entitled: "Advanced High-K Gate Dielectric for
High-Performance Short-Channel In0.7Ga0.3As Quantum Well Field Effect
Transistors on Silicon Substrate for Low Power Logic Applications,"
relates to the development of novel technology for producing leading
edge transistor devices for future generation high-speed, ultra-low
power digital logic applications.
IQE's facility in Bethlehem, PA, produced the blanket InGaAs QWFET
epiwafers grown on Si substrates using molecular beam epitaxy (MBE).
Intel Corporation used the blanket epiwafers for their transistor
design and fabrication.
Steve Gergar, General Manager of IQE's Pennsylvania operation
"IQE has played a key role in the development of epitaxial materials
upon which Intel has fabricated devices which demonstrate improved
device characteristics and significantly higher transistor drive
performance whilst maintaining low power consumption.
"The results of this work demonstrate IQE's strength in advanced
epitaxial material engineering built on many years of experience with
III-V materials from research and development through to high-volume
production. Based on this successful research to-date, IQE looks
forward to continued work with Intel in the area of III-V on Si
integration for future generation high performance digital
Technical/Sales: IQE Inc (+1 610 972 1488)
Press: IQE plc (+44 29 2083 9400)
Note to Editors
IQE is the leading global supplier of advanced semiconductor wafers
with products that cover a diverse range of applications, supported
by an innovative outsourced foundry services portfolio that allows
the Group to provide a 'one stop shop' for the wafer needs of the
world's leading semiconductor manufacturers.
IQE uses advanced crystal growth technology (epitaxy) to manufacture
and supply bespoke semiconductor wafers ('epi-wafers') to the major
chip manufacturing companies, who then use these wafers to make the
chips which form the key components of virtually all high technology
systems. IQE is unique in being able to supply wafers using all of
the leading crystal growth technology platforms.
IQE's products are found in many leading-edge consumer,
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The manufacturers of these chips are increasingly seeking to
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order to reduce overall wafer costs and accelerate time to market.
IQE also provides bespoke R&D services to deliver customised
materials for specific applications and offers specialist technical
staff to manufacture to specification either at its own facilities or
on the customer's own sites. The Group is also able to leverage its
global purchasing volumes to reduce the cost of raw materials. In
this way IQE's outsourced services, provide compelling benefits in
terms of flexibility and predictability of cost, thereby
significantly reducing operating risk.
IQE comprises six operating facilities located in Cardiff (two)
and Milton Keynes in the UK; in Bethlehem, Pennsylvania and Somerset,
New Jersey in the USA; and Singapore. The Group also has 11 sales
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