IQE plc : Intel and IQE present three joint papers at the IEDM conference in Washington
Cardiff, 8 December 2011 - Intel Corporation (NASDAQ: INTC) and IQE plc (AIM:
IQE) yesterday presented a series of joint papers on recent key developments in
compound semiconductor device technologies at the International Electron Devices
Meeting (IEDM) in Washington, DC.
The first paper; "Electrostatics Improvement in 3-D Tri-gate Over Ultra-Thin
Body Planar InGaAs Quantum Well Field Effect Transistors with High-K Gate
Dielectric and Scaled Gate-to-Drain/Gate-to-Source Separation" presented by M.
Radosavljevic from the Intel Corporation, demonstrated for the first time 3-D
Tri-gate InGaAs devices with significantly improved electrostatic parameters
compared with equivalent ultra-thin planar devices. The research presented show
that the 3-D Tri-gate architecture is an effective way to improve the
scalability of III-V FETs for future low power logic applications.
The second paper; "Fabrication, Characterization, and Physics of III-V
Heterojunction Tunneling Field Effect Transistors (H-TFET) for Steep Sub-
Threshold Swing" presented by Gilbert Dewey from the Intel Corporation,
demonstrated the steepest subthreshold swing (SS < 60 mV/decade) ever reported
in a III-V Tunneling Field Effect Transistor (TFET) by using thin gate oxide,
heterojunction engineering and high source doping. The overall TFET device
performance is improved compared with homojunction TFETs due to the decreased
source-to-channel tunnel barrier height.
The third paper; "MOVPE III-V Material Growth on Silicon Substrates and its
Comparison to MBE for Future High Performance and Low Power Logic Applications"
presented by Niloy Mukherjee from the Intel Corporation, demonstrated for the
first time, that the material quality of MOVPE III-V QWFET structures on Si can
be matched to that of the best MBE III-V QWFET structures on Si, using 75mm
diameter Si substrates. The research presented suggests that MOVPE can be a
promising technique for III-V material growth on silicon substrates for future
logic device applications.
Established in 1955, the IEDM is the world's premier forum for reporting
breakthroughs in technology, design, manufacturing, physics and the modelling of
semiconductors and other electronic devices. Proceedings of the conference are
published by the IEEE.
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Source: IQE plc via Thomson Reuters ONE
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