IQE plc : Intel and IQE present three joint papers at the IEDM conference in Washington

Cardiff, 8 December 2011 - Intel Corporation (NASDAQ: INTC) and IQE plc (AIM: IQE) yesterday presented a series of joint papers on recent key developments in compound semiconductor device technologies at the International Electron Devices Meeting (IEDM) in Washington, DC. The first paper; "Electrostatics Improvement in 3-D Tri-gate Over Ultra-Thin Body Planar InGaAs Quantum Well Field Effect Transistors with High-K Gate Dielectric and Scaled Gate-to-Drain/Gate-to-Source Separation" presented by M. Radosavljevic from the Intel Corporation, demonstrated for the first time 3-D Tri-gate InGaAs devices with significantly improved electrostatic parameters compared with equivalent ultra-thin planar devices. The research presented show that the 3-D Tri-gate architecture is an effective way to improve the scalability of III-V FETs for future low power logic applications. The second paper; "Fabrication, Characterization, and Physics of III-V Heterojunction Tunneling Field Effect Transistors (H-TFET) for Steep Sub- Threshold Swing" presented by Gilbert Dewey from the Intel Corporation, demonstrated the steepest subthreshold swing (SS < 60 mV/decade) ever reported in a III-V Tunneling Field Effect Transistor (TFET) by using thin gate oxide, heterojunction engineering and high source doping. The overall TFET device performance is improved compared with homojunction TFETs due to the decreased source-to-channel tunnel barrier height. The third paper; "MOVPE III-V Material Growth on Silicon Substrates and its Comparison to MBE for Future High Performance and Low Power Logic Applications" presented by Niloy Mukherjee from the Intel Corporation, demonstrated for the first time, that the material quality of MOVPE III-V QWFET structures on Si can be matched to that of the best MBE III-V QWFET structures on Si, using 75mm diameter Si substrates. The research presented suggests that MOVPE can be a promising technique for III-V material growth on silicon substrates for future logic device applications. Established in 1955, the IEDM is the world's premier forum for reporting breakthroughs in technology, design, manufacturing, physics and the modelling of semiconductors and other electronic devices. Proceedings of the conference are published by the IEEE. CONTACTS: Technical/Sales: IQE Inc (+1 610 972 1488) Amy Liu Press: IQE plc (+44 29 2083 9400) Chris Meadows This announcement is distributed by Thomson Reuters on behalf of Thomson Reuters clients. The owner of this announcement warrants that: (i) the releases contained herein are protected by copyright and other applicable laws; and (ii) they are solely responsible for the content, accuracy and originality of the information contained therein. Source: IQE plc via Thomson Reuters ONE [HUG#1569832]